SKU:21579539265
Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: R: 0. 001 0. 005ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm+ 0. 5 mm x 0. 5 mm Orientation: (100) + 0. 5o Polish:
Material Size Input: < 70mm in diameter
Two years limited with lifetime support
4) mm dia x 175(+/-25) microns
8 wt% ( SiO2 )
Safety valve's open pressure: 1
< 5 o +/- 1o
Brand new laptop with MS Window 10
100 cycles @ 1C: 99%
MTI's engineer will introduce some necessaryconnecting parts into this product
Please click to watch a video explanation of the split test cell installation
591l2 / (l2
Height = 3
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