SKU:50220510520
Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cmThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 50 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 01 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5 x 5 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related
Melting point
Conductive type: P-type/ B-dped
ID: 230 mm (see photo below)
New innovation in MTI
The premium grade black rubber jacket provides excellent resistance to abrasion
Working temperature: 1700°C (in air
et11 / e0: 51 ~54 et11 / e0: 43 ~46
Edge Orientation: <001> +/-1 Deg with 16 mm +/- 1 mm Length
Lithium foil may be oxidized during handling and storage
Single crystal of TGG
Film target thickness: 11 um with (thickness acceptation range) +/- 10%
Power limit 45W per channel (90W with both channels combined)
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