SKU:22361420347
Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 500 nm ( 5000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 01 0. 1 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side
YLJ-CIP-15 is the smallest cold isostatic pressing (CIP) in the world
50/60Hz Noise Level 80 dB @ 1 m distance
or steel tube
Its values decline when the temperature is below 1000 oC
EQ-OM-OS524E infrared thermometers offer solutions for many non-contact temperature measurement applications
Product name: On-off valve with 1/4" BSPP male/female connector
No returns accepted
Packing: The solvent is sealed inside the aluminum container for safe shipping & storage
Size: 5mmx5 mm x 0
Application Warning
Conductor type: S-C-P
Conductor type: Semi-Insulating
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