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SKU:2810606301
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area One side SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >10000 ohm. cm Size: 4"dia + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer
Reducing T Piece KF40-25 with 2 KF40 ports and 1 KF25 port for Peiffer Pump
Orientation: M <10-10> +/-0
Suggested Max
Product dimension
Optical grade single-crystal LiTaO3
8 Mpa ( air compressor is required
Position Thickness & accuracy Cutting thickness is controlled by digital micrometer with the accuracy of 0
Made of 304SS
$396 surcharge will apply
The compact flowmeters are ideal for MTI oven EQ-DZF-6050 Series
two high-temperature silicone O-rings ( 300oC Max
Take out the pellet sample from die
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