SKU:12350591782
Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 1000 nm ( 10000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" x 0. 5mm Orientation: (100) + 1o Polish: one side polished Surface
MTI provides 0
Orientation: (110) +/-3 o
Must place 4 jars or 2 in symmetrical with similar weight in the ball mill to keep balance during rotation
Venting Port
Type: SP1-8512T/BK-LL-P66
Ce:Lu2SiO5
EPD: <5000/cm^2
Size: 10x10x0
Maximum Pressure 120 PSI Decibel Rating (Outdoor) 60 dBA
Package: under 1000 class clean room in wafer container
5 mm at 45o ± 5o
Orientation: (0001) +/-0
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