SKU:76673019874
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1Single crystal Silicon Conductive type: N type As doped Resistivity: <0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 279 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Single Phase 50/60Hz Max
Size: 10x10 x 0
The adhesion of the surface of the target substrate to graphene plays an important role in successful graphene transfer
The electrical insulation is good
660 V~50KA Current 32 A Manual How to change 32A fuse on MTI furnaces Dimension 43 x 43 mm
Surface roughness:< 5A
Conductor type: S-C-N
Improves flow rate and increases efficiency
Never cut any materials without the use of proper cutting fluid
Package: 100 g per lot sealed in Plastic bag
Click here to learn how to prepare LPS solid electrolyte sheet
please click the picture below for the details
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