SiC - 4H (0001), 5x5x0.3 mm , one side polished

SiC - 4H (0001), 5x5x0.3 mm , one side polishedSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um

D alumina tube can be used at operating temperature up to 1700 oC in both oxidizing and reducing atmospheres

K2 (%)   BAW:  0

Energy-saving high-purity Al2O3 fibrous insulation liner

Polishing:                           two sides polished

The EQ-STC-LI-AIR is a Split Test Cell for Lithium-Air Battery Research

an uneven edging excess is expected

Formulae Li3InCl6 Package  10g/bottle

Thermal Conductivity:         640

88)x10^-2 ohm

9% (metal basis)

SS304 steel Structure with internal Silver-Clad surface treatment ensures high electrical conductivity and good corrosion protection

Size:                             3" diameter x 0