SKU:2261755497
SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polishedSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 8mm Dia. x 0. 3mm Polished: One side epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03eV ( Indirect) Conductivity type: N TTV Bow Warp:<25um Micropipe Density:
10-14 Nal (Tl)
and Nickel and their alloys
350 MPa (PEEK
can be used as the electrode for Li-ion or aluminum reliable battery
The KF 25 centering O-Ring shielded pumps and other applications from small particles entering
Options Part 3: Thin Film Thickness / Deposition Rate Monitor
Quantity: 1 pc
core die made of hardened steel and highly polished with hardness HRC 60 - 62
1 x 10 -6 / k a c= 4
adapter is included
Optional: The furnace may be operated by PC with installing a control module
1mm Gas Consumption 490ml/stroke Clean Room Compatibility 1000 grade cleanroom compatible Compressive Gas
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