SKU:2261755497

SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished

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Regular price $127.86 USD
Regular price $174.86 USD Sale price $127.86 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polishedSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 8mm Dia. x 0. 3mm Polished: One side epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03eV ( Indirect) Conductivity type: N TTV Bow Warp:<25um Micropipe Density:

10-14 Nal (Tl)

and Nickel and their alloys

350 MPa (PEEK

can be used as the electrode for Li-ion or aluminum reliable battery

The KF 25 centering O-Ring shielded pumps and other applications from small particles entering

Options Part 3:  Thin Film Thickness / Deposition Rate Monitor

Quantity: 1 pc

core die  made of  hardened steel and highly polished  with hardness HRC 60 - 62

1 x 10 -6 / k               a c= 4

adapter is included

Optional:  The furnace may be operated by PC with installing a control module

1mm Gas Consumption 490ml/stroke Clean Room Compatibility 1000 grade cleanroom compatible Compressive Gas

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