Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,Silicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for

K2 (%)   BAW:  0

to prevent electrolyte from reacting with steel during high voltage charging > 4

working temperature: 80oC

Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC

5 thread) for thermocouple inserted

Al2O3 and SrTiO3 single crystal substrate by a unique technology

Power AC 208-240V 50/60Hz

EPD:                           < 5000 /cm^2

Purity:           99

MSK-110 is a new design and CE Certified coin cell crimper with lighter weight and a smaller footprint

and elasticity

feedthrough with SMA female (in the deposition chamber) to BNC female (outside chamber) adapter)