SKU:88350606799
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01USGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
Microwave Frequency: 2
Carrier Concentration: 1
You may use lab press and dry pressing die below to preparate a electrode pellet instead of using electrode coated Al or Cu foil
Length: 60 mm (2
05% of reading + 0
Since 1 Bar = 1
NOTE: Picture is for showing both sides of the blank flange
254mm Tabs 25ms Welding Time 70% Welding Current 0
Polishing: As Cut
Degree of Substituon (D
Mobility: 3710-6230cm^2/V
Continuous Temperature
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