SKU:16766329086
GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1spGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 01 6. 30) x 10^17 cm^3 Mobility: 184 200cm^2 V. S EPD: <5000 cm^2 resistivity: (5. 14 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Oxygen free copper gasket for high vacuum sealing of 61mmOTF-1200X-HP-30
Single phase
CE Certified
8 Gold Plated spring load holders with adjustable height for measuring cylinder or coin cell up to 70mm(H) (please click a picture below 1-2 to enlarge)
The 3D Graphene Foam is made via chemical vapor deposition (CVD) processing
Variable speed 0 - 600 RPM with digital display for each plate
Orientation: c-axis (0001) +/- 1
Constant Current Discharging
Measurement cycles
Crystal Structure: Hexagonal
Wafer size:0
1 mm ( or 1" x 1" x 1
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