SKU:42194431999
LaAlO3, (100) Orn. EPI polishing 3" x 0.5mm wafer 2 SP --- Qty discounted!
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
LaAlO3, (100) Orn. EPI polishing 3" x 0.5mm wafer 2 SP --- Qty discounted!LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +
low noise level
One magnet is embedded inside the thermal block
Power Cord Extention w/ Feed Through for using in a glove-box
FLAAT (Flat Layers At All Temperatures) GaN Template ( ALN buffer )
Formula weight: 40
Curie Point: 610 oC
Li2CO3 (%) 0
Silicon single crystal wafer
7%wt Nb doping
et11 / e0: 51 ~54 et11 / e0: 43 ~46
99% (horizontal polymer strip is made of modified polypropylene (PP) and polyethylene naphthalate (PEN))
Sampling Frequency
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Your LaAlO3, (100) Orn. EPI polishing 3" x 0.5mm wafer 2 SP --- Qty discounted! orders ship within 1-2 business days.
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