SKU:56984187944
LaAlO3,(100) Orn. EPI polishing 2" x 1.0 mm wafer 2SP --- Qty discounted!
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
LaAlO3,(100) Orn. EPI polishing 2" x 1.0 mm wafer 2SP --- Qty discounted!LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 2" dia + 0. 5 mm x 1. 0 thickness + 0. 05 mm Wafer Orientation: (100) +
009% of FSO/°C Safe Overload: 150% of Capacity Ultimate Overload: 300% of Capacity Bridge Resistance: 350 Ohms minimum Construction: Stainless Steel Electrical Connection: 1
Adhesive Polymer Tape on the tab allows for immediate hot sealing
Made in USA and two years warranty
Epitaxial thin Film Composition
Size: 10x10x 1
Polish: one side polish
Total thicness: ~50 um
You may need a vacuum oven to dry the films and remove binder after coating
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This setup will stiffen up the film for ensuring smooth cuts on the edges of the disc
• UV Grade Fused Silica (Corning 0F 7980 HPFS)
3 Specific Surface Area (m2/g)
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Your LaAlO3,(100) Orn. EPI polishing 2" x 1.0 mm wafer 2SP --- Qty discounted! orders ship within 1-2 business days.
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- Fast: 2-3 business days
- Express: 1-2 business days
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