SKU:87478681031
SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)Specifications Device Layer Size: 5mmx5mm Type Dopant: N type P doped Orientation: <1 0 0>+ 0. 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0 um + 0. 1 um Handle Wafers: Type Dopant P type B doped Orientation <1 0 0>+ 0. 5 degree Resistivity: 10 20 ohm. cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner
for heating up Compact RTP Tube Furnace with max
Size: 3" diameter x 1
Meter Type Variable Area Scale 2" Scale Valve Stainless Steel Valve Temperature Limit 103 F Pressure Limit 100 PSI Connection Size 8th inch Accuracy 4% Low Range Cubic Centimeters per Minute 100 CCM High Range Cubic Centimeters per Minute 1000 CCM
Size: 10mm x 3mm x 0
GaAs single crystal wafer
07 A c = 10
Thermal Expansion: 7
The 1/4" barb fitting for the rubber hose connection allows heating samples in a vacuum or flowing gas
Application Case:
Orientation: C-axis[0001] off M-plane(1-100) 0
Composition: CaF2 single crystal
Polishing: Two sides polished
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