SKU:57984843405
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 16 - Jul 21
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Growth method Dry oxidizing at 1000oC Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N Type P doped Resistivity: 1 10 ohm. cm Size: 4" + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click
vacuum or inert gas)
Power Consumption 600 W 20W 20W Working Voltage 110 - 240VAC
If you have your own pump with KF25 PORT
Dimension: 5 mm x 10 mm +/- 0
4 x106 /cm3
) and three screws
feedthrough
Conductivity:Undoped
5 mm SiO2/ Si wafer (Prime Grade)
Cleanroom Class 100 (Equivalent to ISO 5)
05'' (44
Composition: Ge single crystal
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